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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3902 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) *Large Current Capacity *Complement to Type 2SA1507 APPLICATIONS *Color TV audio output, converters, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 2.5 A 10 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 1.5 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3902 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10A; IE= 0 IC= 1mA; RBE= 180 V V(BR)CEO Collector-Emitter Breakdown Voltage 160 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10A; IC= 0 6 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA IC= 500mA; IB= 50mA VCB= 120V; IE= 0 VEB= 4V; IC= 0 0.45 V Base-Emitter Saturation Voltage 1.2 V A A Collector Cutoff Current 0.1 IEBO Emitter Cutoff Current 0.1 hFE DC Current Gain IC= 10mA; VCE= 5V 100 400 fT Current-Gain--Bandwidth Product IC= 50mA; VCE= 10V 120 MHz COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 14 pF Switching Times s s s ton tstg tf Turn-on Time IC= 0.7A, IB1= -IB2= 70mA RL= 14.3; VCC= 100V 0.04 Storage Time 1.2 Fall Time 0.08 hFE Classifications R 100-200 S 140-280 T 200-400 isc Websitewww.iscsemi.cn 2 |
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